首页 >IE430F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CrystalClockOscillatorSpecification | IQD IQD Frequency Products Ltd | IQD | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRDs(on)athighvoltage •Improvedinductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapactiance •Extendedsafeoperatingarea •Improvedhightemperaturereliablitiy •TO-3package(Highvol | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi | IRF International Rectifier | IRF | ||
4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET 4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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