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IDT71V35761S166BQGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BQGI

包装:托盘 封装/外壳:165-TBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4.5MBIT PAR 165CABGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V35761S166BQGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BQGI8

包装:托盘 封装/外壳:165-TBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4.5MBIT PAR 165CABGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V35761S166PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V35761S166PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V35761S166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166PFG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166PFGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V35761S166PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

产品属性

  • 产品编号:

    IDT71V35761S166BQGI

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    4.5Mb(128K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-TBGA

  • 供应商器件封装:

    165-CABGA(13x15)

  • 描述:

    IC SRAM 4.5MBIT PAR 165CABGA

供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
23+
165-CABGA(13x15)
3200
专业分销产品!原装正品!价格优势!
询价
IDT, Integrated Device Technol
21+
64-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
165-CABGA(13x15)
56200
一级代理/放心采购
询价
IDT
23+
165-FBGA
4815
原装现货
询价
IDT
20+
BGA-165
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT
22+
165CABGA (13x15)
9000
原厂渠道,现货配单
询价
IDT
21+
165CABGA (13x15)
13880
公司只售原装,支持实单
询价
Renesas Electronics America In
2022+
165-TBGA
6680
原厂原装,欢迎咨询
询价
IDT
23+
165CABGA (13x15)
9000
原装正品,支持实单
询价
IDT, Integrated Device Techno
23+
165-CABGA13x15
7300
专注配单,只做原装进口现货
询价
更多IDT71V35761S166BQGI供应商 更新时间2024-3-28 16:30:00