CoolSiC™ Schottky Diode

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design ·Benchmark switching behavior\n ·No reverse recovery charge\n ·Temperature independent switching behavior\n ·High operating temperature (T j max 175°C);

Infineon

英飞凌

2nd Generation thinQ SiC Schottky Diode

文件：241.06 Kbytes 页数：7 Pages

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 5.6A TO252-3

Infineon

英飞凌

2ndGeneration thinQ!TM SiC Schottky Diode

文件：236.11 Kbytes 页数：7 Pages

Infineon

英飞凌

2nd Generation thinQ SiC Schottky Diode

文件：473.08 Kbytes 页数：7 Pages

Infineon

英飞凌

2nd Generation thinQ SiC Schottky Diode

文件：251.01 Kbytes 页数：7 Pages

Infineon

英飞凌