2nd generation thinQ SiC Schottky Diode

文件：61.02 Kbytes 页数：4 Pages

Infineon

英飞凌

2nd generation thinQ!TM SiC Schottky Diode

文件：112.26 Kbytes 页数：4 Pages

Infineon

英飞凌

Chip Diode

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled D ·Revolutionary semiconductor material - silicon carbide\n ·Switching behaviour benchmark\n ·No Reverse Recovery / no forward recovery\n ·Temperature independent switching behaviour\n ·Qualified according to JEDEC based on target applications;

Infineon

英飞凌

2nd Generation thinQ SiC Schottky Diode

文件：440.47 Kbytes 页数：7 Pages

Infineon

英飞凌

SiC Schottky Rectifier

FEATURES ·Switching Behavior Benchmark · No Forward Recovery · No Reverse Recovery · High Surge Current Capability APPLICATIONS · Motor Drives · Switch mode power supply

文件：241.27 Kbytes 页数：3 Pages

ISC

无锡固电

2nd generation thinQ SiC Schottky Diode

文件：237.87 Kbytes 页数：7 Pages

Infineon

英飞凌