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IC-PT2610

6-CH.PHASEDARRAYOPTOENCODER(26-1000)

ICHAUS

IC-Haus GmbH

K2610

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

L2610

LOWDROPOUTVOLTAGEREGULATORS

DESCRIPTION TheL2600seriesogthreeterminalpositiveregulatorsisspeciallydesignedtostabilizepowersuppliescarinstrumentationinvehicleswith12Vbattery.Availablewithoutputvoltagesequalto5V,8.5V,10V,theycansupplyanoutputcurrentto500mA. Thesedevicesareprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L2610V

LOWDROPOUTVOLTAGEREGULATORS

DESCRIPTION TheL2600seriesogthreeterminalpositiveregulatorsisspeciallydesignedtostabilizepowersuppliescarinstrumentationinvehicleswith12Vbattery.Availablewithoutputvoltagesequalto5V,8.5V,10V,theycansupplyanoutputcurrentto500mA. Thesedevicesareprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L2610X

LOWDROPOUTVOLTAGEREGULATORS

DESCRIPTION TheL2600seriesogthreeterminalpositiveregulatorsisspeciallydesignedtostabilizepowersuppliescarinstrumentationinvehicleswith12Vbattery.Availablewithoutputvoltagesequalto5V,8.5V,10V,theycansupplyanoutputcurrentto500mA. Thesedevicesareprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LA2610

AnalogSurroundProcessingIC

Overview TheLA2610isanambiancereproductionprocessorforuseinaudio,TV,andpersonalcomputerequipmentapplications.ThisICeasilyreproducesalivespacefilledwithasenseofpresencebyprocessingstereosignalsfrommusicalandaudio-visualsources. Features •Wideoperatingsupp

SANYOSanyo Semicon Device

三洋三洋电机株式会社

LMG2610

LMG2610Integrated650-VGaNHalfBridgeforActive-ClampFlybackConverters

1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter

TITexas Instruments

德州仪器美国德州仪器公司

LMG2610

LMG2610Integrated650-VGaNHalfBridgeforActive-ClampFlybackConverters

1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter

TITexas Instruments

德州仪器美国德州仪器公司

LMG2610RRGR

LMG2610Integrated650-VGaNHalfBridgeforActive-ClampFlybackConverters

1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter

TITexas Instruments

德州仪器美国德州仪器公司

LMG2610RRGT

LMG2610Integrated650-VGaNHalfBridgeforActive-ClampFlybackConverters

1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter

TITexas Instruments

德州仪器美国德州仪器公司

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