首页 >I06N60T>规格书列表

零件编号 下载&订购 功能描述 制造商&上传企业 LOGO

06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFUJI CORPORATION

株式会社FUJI

Fuji

AIHD06N60R

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

AIHD06N60RF

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CJP06N60

PowerfiledEffectTransistor

FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

CMT06N60

POWERFIELDEFFECTTRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

CHAMPChampion Microelectronic Corp.

虹冠虹冠电子

CHAMP

CMT06N60

POWERFIELDEFFECTTRANSISTOR

CHAMPChampion Microelectronic Corp.

虹冠虹冠电子

CHAMP

CMT06N60

POWERFIELDEFFECTTRANSISTOR

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

EMD06N60A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EXCELLIANCE

EMD06N60CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EXCELLIANCE

EMD06N60F

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EXCELLIANCE

FMC06N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FMC06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMI06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMP06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMP06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMP06N60ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FMV06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMV06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FTA06N60C

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

H06N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMC

华昕

HSMC
供应商 型号 品牌 批号 封装 库存 备注 价格
23+
N/A
46280
正品授权货源可靠
询价
VB
2019
TO-220F
55000
绝对原装正品假一罚十!
询价
FAIRCHILD/仙童
23+
TO-252(DPAK)
69820
终端可以免费供样,支持BOM配单!
询价
F
23+
TO-220F
10000
公司只做原装正品
询价
F
22+
TO-220F
6000
十年配单,只做原装
询价
F
23+
TO-220F
6000
原装正品,支持实单
询价
F
23+
TO-220F
8400
专注配单,只做原装进口现货
询价
VBSEMI
19+
TO-220F
29600
绝对原装现货,价格优势!
询价
AEROTEK
40
询价
NXP
23+
NA
2806
专做原装正品,假一罚百!
询价
更多I06N60T供应商 更新时间2024-3-29 11:36:00