零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | |||
POWERFIELDEFFECTTRANSISTOR | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | |||
POWERFIELDEFFECTTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | |||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | |||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
46280 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-252(DPAK) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
F |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
F |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
F |
23+ |
TO-220F |
6000 |
原装正品,支持实单 |
询价 | ||
F |
23+ |
TO-220F |
8400 |
专注配单,只做原装进口现货 |
询价 | ||
VBSEMI |
19+ |
TO-220F |
29600 |
绝对原装现货,价格优势! |
询价 | ||
AEROTEK |
40 |
询价 | |||||
NXP |
23+ |
NA |
2806 |
专做原装正品,假一罚百! |
询价 |
相关规格书
更多- I1-201-5
- I90135F
- IAA110P
- IAM-81008
- IAM-91563-TR1
- IC41C16256-35K
- IC42S16100-7T
- IC42S16800-7T
- IC-5006-SP1
- IC61C256AH-12J
- IC61C256AH-15N
- ICD2023SC-2
- ICD2051SC
- ICE1PCS01
- ICE2A0565
- ICE2A165
- ICE2A265
- ICE2A280Z
- ICE2A765P
- ICE2B0565
- ICE2B265
- ICE2BS01
- ICL232CPE
- ICL232MJE
- ICL3207CB
- ICL3207ECB
- ICL3217ECA
- ICL3221CV
- ICL3221EIA
- ICL3222CA
- ICL3222CV
- ICL3222ECA
- ICL3222EIV
- ICL3223CA
- ICL3223ECA
- ICL3223IA
- ICL3226CA
- ICL3227ECA
- ICL3232CB
- ICL3232CV
- ICL3232ECB
- ICL3232EIA
- ICL3232IBN
- ICL3237IA
- ICL3241CA
相关库存
更多- I80134E
- I90188F
- IAM81008
- IAM-81008-TR1
- IC01CP
- IC41C16257-35K
- IC42S16400-7T
- IC42S32200-6T
- IC-5007-SP1
- IC61C256AH-15J
- IC61LV25616-10T
- ICD2025SC-1
- ICD2061ASC-1
- ICE1QS01
- ICE2A0565Z
- ICE2A180Z
- ICE2A280
- ICE2A365
- ICE2AS01
- ICE2B165
- ICE2B365
- ICL232CBE
- ICL232IPE
- ICL3207CA
- ICL3207ECA
- ICL3217CA
- ICL3221CA
- ICL3221ECA
- ICL3221IA
- ICL3222CB
- ICL3222CV-T
- ICL3222EIB
- ICL3222IB
- ICL3223CV
- ICL3223ECV
- ICL3224CA
- ICL3226EIA
- ICL3232CA
- ICL3232CP
- ICL3232ECA
- ICL3232ECBN
- ICL3232IB
- ICL3232IV
- ICL3238EIA
- ICL3241CB