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HZS6B2

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HZU6B2L

SiliconPlanarZenerDiodeforLowNoiseApplication

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

LNW6B2GZFZ

5.0mmPureGreen

PanasonicPanasonic Semiconductor

松下松下电器

PD6B2BA

N-ChannelEnhancementModeMOSFET

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

PD6B2BA

N-ChannelEnhancementModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

PK6B2BA

N-ChannelEnhancementModeMOSFET

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

PK6B2BA

N-ChannelEnhancementModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

RKZ6B2KD

SiliconPlanarZenerDiodeforStabilizedPowerSupply

Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mW. •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •LLDPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

SDT6B2Q

ESDProtectionDiode

Features •TransientprotectionfordatalinestoIEC61000-4-2(ESD)15KV(air),8KV(contact) •Smallpackageforuseinportableelectronics •ProtectiononeI/Oorpowerline. •Lowleakagecurrent Applications •ESDProtection

AUK

AUK corp

USB6B2

DATALINESPROTECTION

DESCRIPTION Inordertopreventfasttransientsfromleadingtoseveredamagesinahighspeeddatasystem,aspecificprotectionhasbeendevelopedbySTMicroelectronics. TheUSB6Bxprotectsthetwoinputlinesagainstovervoltage.Besides,thisdevicealsokeepsthepowerrailsinasafelimit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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