HYB3164400AJ中文资料西门子数据手册PDF规格书

This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology.

Advanced Information

• 16 777 216 words by 4-bit organization

• 0 to 70 °C operating temperature

• Fast Page Mode operation

• Performance:

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation:

max. 396 mW active ( HYB 3164400AJ/AT(L) -40)

max. 324 mW active ( HYB 3164400AJ/AT(L) -50)

max. 270 mW active ( HYB 3164400AJ/AT(L) -60)

max. 558 mW active ( HYB 3165400AJ/AT(L) -40)

max. 468 mW active ( HYB 3165400AJ/AT(L) -50)

max. 378 mW active ( HYB 3165400AJ/AT(L) -60)

7.2 mW standby (LVTTL)

3.24 mW standby (LVCMOS)

720 µW standby for L-versions

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh (L-version only)

• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT)

4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)

• 256 msec refresh period for L-versions

• Plastic Package

P-SOJ-32-1 400 mil HYB 3164(5)400AJ

P-TSOPII-32-1 400 mil HYB 3164(5)400AT