HY51V18163HGJ规格书批发供应SK海力士Hynix-114ic电子网

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HY51V18163HGJ	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGJ-5	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGJ-6	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGJ-7	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGT	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGT-5	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGT-6	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V18163HGT-7	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51V7403HG	文件：96.41 Kbytes Page：11 Pages	4M x 4Bit EDO DRAM DESCRIPTION TheHY51V(S)17403HG/HGListhenewgenerationdynamicRAMorganized4,194,304wordsx4bit. HY51V(S)17403HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)17403HG/HGLoffersExtendedDataOutPageM	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51VS17403HG	文件：96.41 Kbytes Page：11 Pages	4M x 4Bit EDO DRAM DESCRIPTION TheHY51V(S)17403HG/HGListhenewgenerationdynamicRAMorganized4,194,304wordsx4bit. HY51V(S)17403HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)17403HG/HGLoffersExtendedDataOutPageM	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY51VS18163HG	文件：107.49 Kbytes Page：12 Pages	1M x 16Bit EDO DRAM DESCRIPTION TheHY51V(S)18163HG/HGListhenewgenerationdynamicRAMorganized1,048,576wordsx16bit.HY51V(S)18163HG/HGLhasrealizedhigherdensity,higherperformanceandvariousfunctionsbyutilizingadvancedCMOSprocesstechnology.TheHY51V(S)18163HG/HGLoffersExtendedDataOutPage	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY5110A	文件：626.89 Kbytes Page：11 Pages	N-Channel Enhancement Mode MOSFET	HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司	HUAYI
HY5110W	文件：626.89 Kbytes Page：11 Pages	N-Channel Enhancement Mode MOSFET	HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司	HUAYI
HY514400	文件：916.74 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400A	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400AJ	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400ALJ	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400ALR	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400ALT	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
HY514400AR	文件：804.34 Kbytes Page：18 Pages	1M x 4-bit CMOS DRAM	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	HY51V18164B-JC-60	HY	07+	SOJ42	5064		询价
深圳市科恒伟业电子有限公司	HY51V18164BJC-60	HYUNDAI	2016+	SOJ	6523	房间原装进口现货假一赔十	询价
鑫勃源（上海北京青岛）有限公司	HY51V18164BJC-60	korea	23+	sop	18000		询价
齐创科技(上海,北京,青岛)有限公司	HY51V18164BJC-60	korea	23+	sop	5000	原装正品,假一罚十	询价
深圳市博浩通科技有限公司	HY51V18164BJC-60	HYUNDAI	23+	SOJ	11000	特价库存	询价
深圳市百视威讯电子科技有限公司	HY51V18164BJC-60		23+	N/A	90750	正品授权货源可靠	询价
深圳市维尔达电子有限公司	HY51V18164BJC-60	HY	2023+	SOJ	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	HY51V18164BJC-60	HY	21+	SOJ	35200	一级代理/放心采购	询价
深圳市汇莱威科技有限公司	HY51V18164BJC-60	HYUNDAI		SOJ	265209	假一罚十原包原标签常备现货!	询价
深圳市振芯物联科技有限公司	HY51V18164BJC-60	HYUNDAL	22+	SOJ40	32350	原装正品假一罚十公司现货	询价

更多HY51供应商更新时间2024-4-29 16:30:00

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