零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HY2N7002E | N-Channel Enhancement Mode MOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | |||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | |||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant. | Calogic Calogic | |||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns | WEITRONWEITRON 威堂電子科技 | |||
NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER | STANSONStanson Technology Stanson 科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical | semiWell semiWell | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-ChannelSmallSignalMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNELTRANSISTOR Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
DMOSTransistors(N-Channel) | GE GE Industrial Company |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HY |
21+ |
SOT23-3L |
30000 |
只做原装 原厂授权代理证书 |
询价 | ||
HUAYI |
24+25+/26+27+ |
SOT-23-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
BOOMELE(博穆精密) |
2308+ |
390456 |
一级代理,原装正品,公司现货! |
询价 | |||
BOOMELE(博穆精密) |
22+ |
连接器 |
123000 |
主打连接器供应,现货库存 |
询价 | ||
SILERGY/矽力杰 |
23+ |
SOT23-6 |
15000 |
全新原装现货,价格优势 |
询价 | ||
HY |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HY |
DIP |
7500 |
询价 | ||||
HY原装 |
22+23+ |
DIP |
27696 |
绝对原装正品全新进口深圳现货 |
询价 | ||
HYCOM |
07+ |
SMD |
700 |
原厂原装仓库现货,欢迎咨询 |
询价 | ||
HY |
2801+ |
DIP |
14930 |
只做原装现货、主营光电元器件/门市现货 |
询价 |
相关规格书
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- HY-3002
- HY-3003
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- HY3003D
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相关库存
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- HY310
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- HY3106
- HY3108C2
- HY310X-E016
- HY3116
- HY3116-M010
- HY3118
- HY3118-E016
- HY311X
- HY311X-M010
- HY3130
- HY3130-L048
- HY3131
- HY3131-L044
- HY3131-L048
- HY313X
- HY313X-L048
- HY-3189
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- HY3203C2
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