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HY27SF081G2M-VEP中文资料海力士数据手册PDF规格书
相关芯片规格书
更多- HY27SF081G2M-VEB
- HY27SF081G2M-TPES
- HY27SF081G2M-TPCB
- HY27SF081G2M-VCS
- HY27SF081G2M-VCP
- HY27SF081G2M-TPIP
- HY27SF081G2M-TPIB
- HY27SF081G2M-TEP
- HY27SF081G2M-V
- HY27SF081G2M-TMS
- HY27SF081G2M-TPIS
- HY27SF081G2M-TPCP
- HY27SF081G2M-TMP
- HY27SF081G2M-TMB
- HY27SF081G2M-TES
- HY27SF081G2M-TPMS
- HY27SF081G2M-TPMB
- HY27SF081G2M-TIB
HY27SF081G2M-VEP规格书详情
SUMMARY DESCRIPTION
The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
产品属性
- 型号：
HY27SF081G2M-VEP
- 制造商：
HYNIX
- 制造商全称：
Hynix Semiconductor
- 功能描述：
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
2025+ |
TSOP |
3875 |
全新原厂原装产品、公司现货销售 |
询价 | ||
HYNIX |
12+ |
550000 |
普通 |
询价 | |||
HYNIX |
2403+ |
TSOP48 |
6489 |
原装现货热卖!十年芯路!坚持! |
询价 | ||
HYNIX |
23+ |
TSOP48 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
HYNIX/海力士 |
24+ |
TSOP48 |
15000 |
原装现货假一赔十 |
询价 | ||
专营HYNIX |
23+ |
TSSOP |
3500 |
询价 | |||
HYNIX |
24+ |
TSOP48 |
35200 |
一级代理分销/放心采购 |
询价 | ||
HYNIX |
24+ |
TSOP |
60000 |
全新原装现货 |
询价 | ||
HYNIX |
22+ |
TSOP48 |
5000 |
询价 | |||
专营HYNIX |
22+ |
专营HISILICON |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
