HY1302S资料datasheet下载原装现货华羿微电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HY1302S	文件：1.45035 Mbytes Page：11 Pages	丝印：HY1302；Package：SOP-8L；N-Channel Enhancement Mode MOSFET 文件：1.45035 Mbytes 页数：11 Pages	HUAYI 华羿微电	HUAYI
HY1302S	文件：300 bytes Page：1 Pages	Single N MOSFET(12V~40V)	Huayi 华羿微电	Huayi
IRF1302	文件：523.539 Kbytes Page：9 Pages	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 文件：523.539 Kbytes 页数：9 Pages	IRF	IRF
IRF1302L	文件：229.09 Kbytes Page：11 Pages	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 文件：229.09 Kbytes 页数：11 Pages	IRF	IRF
IRF1302PBF	文件：165.37 Kbytes Page：10 Pages	AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A ) 文件：165.37 Kbytes 页数：10 Pages	IRF	IRF

更多HY1302供应商更新时间2025-11-14 14:02:00