MDL,SIN,100D,1:1,SM,TU

文件：454.69 Kbytes 页数：3 Pages

pulse

MDL,SIN,100D,1:1,SMT

文件：301.63 Kbytes 页数：3 Pages

pulse

N-Channel Enhancement Mode MOSFET

文件：1.45035 Mbytes 页数：11 Pages

HUAYI

华羿微电

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

文件：523.539 Kbytes 页数：9 Pages

IRF