L-Band Power FET Non-Via Hole Chip

Description Designed for various RF and Microwave applications, the HWF1686NC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 µm gate length. Features ● Output Power: P1dB=30dBm(typ.) ● High Gain: GL=15dB(typ.) ● High Efficiency: PAE =45(typ.) ● High Linearity: IP3=45dBm(typ.

文件：108.64 Kbytes 页数：3 Pages

HW

汉威光电

GaAs Power MESFET Chips

Hexawave

汉威电子

L-Band GaAs Power FET

Description The HWF1686RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. Features • Output Power: P1dB=30 dBm (typ.) • High Gain: GL=16 Db (typ.) • High Efficiency: PAE =45 (typ.) • H

文件：106.79 Kbytes 页数：3 Pages

HW

汉威光电

L-Band Power FET Via Hole Chip

文件：107.65 Kbytes 页数：3 Pages

HW

汉威光电

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：75.59 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司