HW433

1/2 WATT METAL

HW433

1/2 WATT METAL

HWS433

GaAs0.95-2.15GHz2x2SwitchMatrix

Description TheHWS433isaGaAsPHEMT2x2switchmatrixoperatingat0.95to2.15GHzinalowcostTSSOP-16plasticlead(Pb)freepackage.Anyofthetwoinputscanbedirectedtoanyofthetwooutputs.TheHWS433issuitableforuseinDirectBroadcastSatellite(DBS)switchingsystemorC

IRF433

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi

IRF433

N-CHANNELPOWERMOSFETS

FEATURES •LowRDs(on)athighvoltage •Improvedinductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapactiance •Extendedsafeoperatingarea •Improvedhightemperaturereliablitiy •TO-3package(Highvol

IRF433

iscN-ChannelMOSFETTransistor

DESCRIPTION •siliconGateforfastswitchingatelevate •rugged •lowdriverequirements •easeofparalleling APPLICATIONS •highspeedapplicationssuchasSwitchingpowersupplies,ACandDCmotorcontrolsrelayandsolenoiddriver.

IRF433

N-ChannelPowerMOSFETs,4.5A,450V/500V

IRF433

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi

IRFS433

iscN-ChannelMOSFETTransistor

IRFS433

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.