首页 >HVM187STR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarPINDiodeforHighFrequencyAttenuator Features •Lowforwardresistance.(rf=5.5max) •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPINDiodeforHighFrequencyAttenuator Features •Lowforwardresistance.(rf=5.5Ωmax) •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPINDiodeforHighFrequencyAttenuator Features •Lowforwardresistance.(rf=5.5Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencyAttenuator Features •Lowforwardresistance.(rf=5.5Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Panneauxinterieurs | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
Porteopaque | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
Portevitree | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICONEPITAXIALPLANARDIODE(ULTRAHIGHSPEEDSWITCHING) ULTRAHIGHSPEEDSWITCHINGAPPLICATION. FEATURES •SmallPackage:SOT-23. •LowForwardVoltag:VF=0.92V(Typ.). •FastReverseRecoveryTime:trr=1.6ns(Typ.). •SmallTotalCapacitance:CT=2.2pF(Typ.). •SuffixU:QualifiedtoAEC-Q101. ex)KDS187-RTK/HU | KECKEC CORPORATION KEC株式会社 | KEC | ||
600Vac | Littelfuselittelfuse 力特力特公司 | Littelfuse |
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