Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C=0.6pF max) • Low forward resistance. (rf=2.0Ω max) • Low operation current. • Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency.

文件：25.27 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Epitaxial Trench Pin Diode

Features ● Adopting the trench structure improves low capacitance.(C=0.6pF max) ● Low forward resistance. (rf=2.0 Ω max) ● Low operation current.

文件：32.619 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Trench Pin Diode for Antenna Switching

HITACHI

日立

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.6 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Super small Flat Package (SFP) is suitable for surface mount design.

文件：80.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

Data Acquisition

Data Acquisition

文件：6.38071 Mbytes 页数：180 Pages

Intersil

Data Acquisition

Data Acquisition

文件：6.38071 Mbytes 页数：180 Pages

Intersil