High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

文件：324.59 Kbytes 页数：7 Pages

SUTEX

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

文件：324.59 Kbytes 页数：7 Pages

SUTEX

High-Voltage Current-Mode PWM Controller

General Description\nThe Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any topolo ❏ 10 to 120V input range\n❏ Current-mode control\n❏ High efficiency\n❏ Up to 1.0MHz internal oscillator\n❏ Internal start-up circuit\n❏ Low internal noiseApplications\n❏ DC/DC converters\n❏ Distributed power systems\n❏ ISDN equipment\n❏ PBX systems\n❏ Modems ;

Microchip

微芯科技

High-Voltage Current-Mode PWM Controller

General Description The Supertex HV9110 through HV9113 are a series of BiCMOS/DMOS single-output, pulse width modulator ICs intended for use in high-speed high-efficiency switchmode power supplies. They provide all the functions necessary to implement a single-switch current-mode PWM, in any to

文件：324.59 Kbytes 页数：7 Pages

SUTEX

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)

HEXFET technology is the key to International Rectififers advanced line of power MOSFET transistors. ■ P-Channel Versatility ■ For Automatic Insertion ■ Compact Plastic Package ■ End Stackable ■ Fast Switching ■ Low Drive Current ■ Easily Paralleled ■ Excellent Temperature Stability

文件：173.36 Kbytes 页数：6 Pages

IRF

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：54.38 Kbytes 页数：6 Pages

Intersil