丝印：HUF76629D3ST；Package：D-PAK；N-Channel Logic Level UltraFET짰 Power MOSFET 100V, 20A, 52m廓

文件：550.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.harris.com • Peak Current vs Pulse W

文件：334.94 Kbytes 页数：9 Pages

Intersil

20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：203.14 Kbytes 页数：10 Pages

Fairchild

仙童半导体

20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：203.14 Kbytes 页数：10 Pages

Fairchild

仙童半导体

20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.harris.com • Peak Current vs Pulse W

文件：334.94 Kbytes 页数：9 Pages

Intersil

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

文件：2.16145 Mbytes 页数：4 Pages

Bychip

百域芯

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

文件：2.19026 Mbytes 页数：4 Pages

Bychip

百域芯

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.60197 Mbytes 页数：4 Pages

Bychip

百域芯

N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，20A，52mΩ

N-Channel Logic Level UltraFET® Power MOSFET 100 V, 20 A, 52 mΩ • Typ rDS(on) = 41 mΩ at VGS = 10V, ID = 20A\n• Typ Qg(tot) = 39 nC at VGS = 10 V, ID = 20 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体

MOSFET N-CH 100V 20A IPAK

ONSEMI

安森美半导体