35A, 55V, 0.034 Ohm, N-Channel UltraFET er MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.14 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N 沟道，UltraFET 功率 MOSFET，55V，35A，34mΩ

这些 N 沟道功率 MOSFET 采用创新的 UltraFET 工艺制造。 这种先进工艺技术实现了单位硅面积内最低的通态电阻，可以带来出色的性能。 此器件能够在雪崩模式下承受高能量并且二极管具有极低的反向恢复时间和存储电荷。 此器件设计用于能效非常重要的应用，例如开关稳压器、开关转换器、电机驱动器、继电器驱动器、低电压总线开关以及便携式设备和电池供电产品的功率管理。以前的开发类型为TA75321。 •35A、55V\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•相关文献 - TB334，“PC板焊接表面贴装组件的指南”;

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件：896.86 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：226.3 Kbytes 页数：10 Pages

Fairchild

仙童半导体

35A, 55V, 0.034 Ohm, N-Channel UltraFET er MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.14 Kbytes 页数：10 Pages

Fairchild

仙童半导体