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型号	下载订购	功能描述	制造商上传企业	LOGO
HUF75309D3	文件：218.88 Kbytes Page：10 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：218.88 Kbytes 页数：10 Pages	Fairchild 仙童半导体	Fairchild
HUF75309D3	文件：102.63 Kbytes Page：9 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：102.63 Kbytes 页数：9 Pages	Intersil	Intersil
HUF75309D3S	文件：780.09 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON) 文件：780.09 Kbytes 页数：5 Pages	Bychip 百域芯	Bychip
HUF75309D3S	文件：218.88 Kbytes Page：10 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：218.88 Kbytes 页数：10 Pages	Fairchild 仙童半导体	Fairchild
HUF75309D3S	文件：102.63 Kbytes Page：9 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：102.63 Kbytes 页数：9 Pages	Intersil	Intersil
HUF75309D3ST	文件：780.05 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON) 文件：780.05 Kbytes 页数：5 Pages	Bychip 百域芯	Bychip
HUF75309P3	文件：218.88 Kbytes Page：10 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：218.88 Kbytes 页数：10 Pages	Fairchild 仙童半导体	Fairchild
HUF75309P3	文件：102.63 Kbytes Page：9 Pages	19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：102.63 Kbytes 页数：9 Pages	Intersil	Intersil
HUF75309T3ST	文件：186.17 Kbytes Page：9 Pages	3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d 文件：186.17 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
HUF75309T3ST	文件：88.27 Kbytes Page：8 Pages	3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d 文件：88.27 Kbytes 页数：8 Pages	Intersil	Intersil

详细参数

型号：
HUF75309
功能描述：
MOSFET 19a 55V N-Channel UltraFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	HUF75309D3S	onsemi(安森美)	24+	TO-252	9062	支持大陆交货,美金交易。原装现货库存。	询价
深圳市星佑电子有限公司	HUF75309D3S	仙童	05+	TO-252	12000	原装进口	询价
深圳市勤思达科技有限公司	HUF75309D3S	FAIRC	12+	TO-252(DPAK)	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市宇集芯电子有限公司	HUF75309D3S	FAIRCHIL	24+	TO-252	90000	一级代理商进口原装现货、价格合理	询价
深圳市正迈科技有限公司	HUF75309D3S	FSC/ON	23+	原包装原封 □□	2886	原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存	询价
深圳市澳亿芯电子科技有限公司	HUF75309D3S	FAIRCHILD	1709+	SOT-252	32500	普通	询价
艾睿（深圳）半导体有限公司	HUF75309D3S	FAIRCHILD/仙童	2447	SOT252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	HUF75309D3S	FAIRCHILD/仙童	23+	SOT252	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	HUF75309D3S	FAIRCHILD	23+	SOT252	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	HUF75309D3S	FAIRCHILD/仙童	21+	SOT252	10000	原装现货假一罚十	询价

更多HUF75309供应商更新时间2025-11-3 16:12:00

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