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HT7530S

Ultralowpowerconsumption,HighVoltageRegulLDO

Features «1.5pACurrentatnoLoad «£2%OutputAccuracy «150mAOutputCurrent «Maximumworkinginputvoltage:28V »PackageAvailableSOT89-3,50T23-5,S0T23-3L

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

IIRFB7530

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFP7530

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF7530

PowerMOSFET(Vdss=20V,Rds(on)=0.030ohm)

Description NewtrenchHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesignerwi

IRF

International Rectifier

IRF7530PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF7530PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRF7530PBF

TrenchTechnology

IRF

International Rectifier

IRF7530TR

TrenchTechnology

IRF

International Rectifier

IRF7530TRPBF

TrenchTechnology

IRF

International Rectifier

IRFB7530

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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