HSZ681

Ceramic Disc Capacitors, Class 2

HSZ681KAQBF0KR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 680PF 500V Y5T RADIAL

HSZ681KAQBRAKR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 680PF 500V Y5T RADIAL

HSZ681KAQBRAKR

包装：卷带（TR） 封装/外壳：径向，圆片式 类别：电容器 陶瓷电容器 描述：CAP CER 680PF 500V Y5T RADIAL

681

RECTIFIERSASSEMBLIES

681

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

681

3M??Scotch짰TransparentFilmTape681

681

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

681

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

681JE

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

681P

HighDischargeRateEnergy-StorageMetalized-FilmCapacitors

Features •Highenergydensity •Metaltubularcase •Lightweight •5joules/cu.in. •80joules/pound MajorApplications: Flash,laser,strobe,beacons.

AN681

USINGTHESi87XXFAMILYOFDIGITALISOLATORS

ARF681

FASTRECOVERYDIODE

FASTRECOVERYDIODE FORIGBT,IEGT,GCTAPPLICATIONS SNUBBERLESSOPERATION LOWLOSSESSOFTRECOVERY Repetitivevoltageupto4500V Meanforwardcurrent1145A Surgecurrent25kA

AT681

PHASECONTROLTHYRISTOR

PHASECONTROLTHYRISTOR Repetitivevoltageupto6000V Meanon-statecurrent840A Surgecurrent10kA

BD681

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

BD681

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD676A,BD678A,BD680AandBD682respectively

BD681

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

BD681

PlasticMedium?뭁owerSiliconNPNDarlingtons

Thisseriesofplastic,medium−powersiliconNPNDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain:hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD675,675A,677,677A,679,679A,

BD681

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD675/A-BD677/A-BD679/A-BD681/AareNPNtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. PNPcomplementsareBD676/A-BD678/A-BD680/A-BD682

BD681

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheBD681,aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-126plasticpackage. TheyareintendedforuseinmediumpowerlinarandswitchingapplicationsThecomplementaryPNPtypesareBD682,respectively.