HSBA15810C中文资料下载供应代理华朔半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HSBA15810C	文件：300 bytes Page：1 Pages	MOSFET	HUASHUO 华朔半导体	HUASHUO
ST15810	文件：357.98 Kbytes Page：13 Pages	N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c 文件：357.98 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP15810	文件：357.98 Kbytes Page：13 Pages	N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c 文件：357.98 Kbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
T-15810	文件：26.05 Kbytes Page：1 Pages	T1/CEPT/ISDN PRI INTERFACE TRANSFORMER 文件：26.05 Kbytes 页数：1 Pages	RHOMBUS-IND	RHOMBUS-IND

更多HSBA15810C供应商更新时间2025-11-2 15:01:00