Silicon Schottky Barrier Diode

Silicon Schottky Barrier Diode Features • Low reverse current, Low capacitance. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

文件：36.57 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for High Speed Switching

Silicon Schottky Barrier Diode for High Speed Switching Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：64.319 Kbytes 页数：5 Pages

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瑞萨

SILICON SCHOTTKY BARRIER DIODE

Features • Low reverse current, Low capacitance. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

文件：33.4 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：64.43 Kbytes 页数：5 Pages

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瑞萨

Silicon Schottky Barrier Diode

Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

文件：23.51 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for High Speed Switching

Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

文件：64.7 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：23.83 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Balanced Mixer

Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：149.81 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：44.78 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Schottky Barrier Diode for High Speed Switching

Features • High forward current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

文件：148.33 Kbytes 页数：5 Pages

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