HS-4080AEH

Radiation Hardened Full Bridge N-Channel FET Driver

Features •ElectricallyscreenedtoSMD#5962-99617 •QMLqualifiedperMIL-PRF-38535requirements •TIDRadHardAssurance(RHA)testing -HDR(50-300rad(Si)/s).............300krad(Si)(max) -HDR(0.01rad(Si)/s).......................50krad(Si) •L

HS-4080AEH

Radiation Hardened Full Bridge N-Channel FET Driver

The HS-4080AEH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (High Enable) lead can force current to freewheel in the bottom t; • Electrically Screened to SMD 5962-99617 \n• QML qualified per MIL-PRF-38535 requirements \n• Radiation environment - Gamma dose: 300kRAD(Si) (max) - Latch-up immune RSG DI process \n• Drives N-Channel FET full bridge including high-side chop capability \n• Bootstrap supply max voltage to 95VDC \n•;

HS-4080ARH

RadiationHardenedFullBridgeN-ChannelFETDriver

TheHS-4080ARHisamonolithic,highfrequency,mediumvoltageFullBridgeN-ChannelFETDriverIC.ThedeviceincludesaTTL-levelinputcomparator,whichcanbeusedtofacilitatethe“hysteresis”andPWMmodesofoperation.ItsHEN(highenable)leadcanforcecurrenttofreewheelinthebottom

KTC4080

EPITAXIALPLANARNPNTRANSISTOR(HIGHFREQUENCYLOWNOISEAMPLIFIER,VHFBANDAMPLIFIER)

HIGHFREQUENCYLOWNOISEAMPLIFIERAPPLICATION. VHFBANDAMPLIFIERAPPLICATION. FEATURES •SmallReverseTransferCapacitance:Cre=0.7pF(Typ.) •LowNoiseFigure:NF=2.5dB(Typ.)(f=100MHz).

KTC4080

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