Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：32.46 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：32.46 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：73.3 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：34.34 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Schottky Barrier Diode for Rectifying

• Low forward voltage drop and suitable for high effifiency rectifying.\n• MPAK package is suitable for high density surface mounting and high speed assembly.;

HITACHI

日立