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IR2109

HALF-BRIDGEDRIVER

Description TheIR2109(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor

IRF

International Rectifier

IR2109

Gatedrivesupplyrangefrom10to20V

IRF

International Rectifier

IR2109

HALF-BRIDGEDRIVER

IRF

International Rectifier

IR2109

Gatedrivesupplyrangefrom10to20V

IRF

International Rectifier

IR2109

HALF-BRIDGEDRIVER

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IR2109PBF

Gatedrivesupplyrangefrom10to20V

IRF

International Rectifier

IR2109S

HALF-BRIDGEDRIVER

Description TheIR2109(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor

IRF

International Rectifier

IR2109S

HALF-BRIDGEDRIVER

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IR2109STRPBF

IR2109(4)(S)&(PBF)HALF-BRIDGEDRIVER

IRF

International Rectifier

IRS2109

HALF-BRIDGEDRIVER

IRF

International Rectifier

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