Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application

文件：523.02 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA MULTI CHIP DISCRETE DEVICE

文件：335.94 Kbytes 页数：8 Pages

TOSHIBA

东芝

Multi-chip discrete device (PNP + SW diode)

Other characteristics (Q1)：High breakdown voltage PNP\nOther characteristics (Q2)：Small-signal SW diode\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC -0.1 A \nQ2 Average Forward Current IO 100 mA \nCollector-emitter voltage (Q1) VCEO -120 V \nQ2 Reverse Voltage VR 80 V ;

Toshiba

东芝