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首页>HN1B01FDW1T1G>芯片详情
HN1B01FDW1T1G_ONSEMI/安森美半导体_两极晶体管 - BJT 200mA 60V Dual Complementary得捷芯城商城
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产品属性
- 类型
描述
- 型号:
HN1B01FDW1T1G
- 功能描述:
两极晶体管 - BJT 200mA 60V Dual Complementary
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
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