NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMPSA44 is designed for application that requires high voltage. Features • High Breakdown Voltage: 400(Min) at IC=1mA • High Current Gain: IC=300mA at 25°C • Complementary to HMPSA94

文件：33.91 Kbytes 页数：3 Pages

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMPSA44V is designed for application that require high voltage. Features • High Voltage: VCEO=400(min) at IC=1mA • High Current: IC=300mV at 25°C • Complementary to HMPSA94V

文件：32.36 Kbytes 页数：3 Pages

HSMC

华昕

TO-92 Bipolar Transistor

HSMC

华昕

NPN EPITAXIAL PLANAR TRANSISTOR

Description\nThe HMPSA44V is designed for application that require high voltage. •High Voltage: VCEO=400(min) at IC=1mA\n•High Current: IC=300mV at 25°C\n•Complementary to HMPSA94V;

HSMC

华昕