首页 >HMCMDB277SX>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarDiodeforUHF/VHFtunerBandSwitch Features •Lowforwardresistance.(rf=0.7Ωmax) •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarDiodeforUHF/VHFtunerBandSwitch Features •Lowforwardresistance.(rf=0.7max) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarDiodeforUHF/VHFtunerBandSwitch Features •Lowforwardresistance.(rf=0.7Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarforUHF/VHFtunerBandSwitch Features •Lowforwardresistance.(rf=0.7Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1Wepoxysealtype | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Band-SwitchingDiode Features ●SmallplasticSMDpackage ●Continuousreversevoltage:max.35V ●Continuousforwardcurrent:max.100mA ●Lowdiodecapacitance:max.1.2pF ●Lowdiodeforwardresistance:max.0.7. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
UltraBrightGaAIAsLamps | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
RoundType | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
RoundType RoundType φ3.0mmSeries | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic |
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