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IIRFP048N

N-ChannelMOSFETTransistor

•DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤16mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ILSEU-Gi048-D

ExternalMountHydrostaticLevelTransmitter

CYNERGY3

Cynergy3 Co

IRFP048

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP048

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

PowerMOSFET(Vdss=60V,Rds(on)=0.018ohm,Id=70A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●IsolatedCentralMountingHole ●175°COperatingTemperature ●Ease

IRF

International Rectifier

IRFP048

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

PowerMOSFET

TFUNKVishay Telefunken

威世威世(VISHAY)集团

IRFP048

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutp

VishayVishay Siliconix

威世科技威世科技半导体

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