GaAs MMIC I/Q MIXER 4.0 - 8.5 GHz

General Description The HMC525 is a compact I /Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is ta

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Hittite

Point-to-Point and Point-to-Multi-Point Radio

General Description The HMC525 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is tak

文件：886.08 Kbytes 页数：9 Pages

MICROSS

GaAs MMIC I/Q MIXER 4.0 - 8.5 GHz

文件：240.18 Kbytes 页数：6 Pages

Hittite

GaAs单芯片微波集成电路(MMIC) I/Q混频器、镜像抑制混频器(IRM)芯片，采用表面贴装技术(SMT)，4.0 GHz至8.5 GHz

HMC525器件为紧凑型I/Q MMIC混频器，采用芯片(HMC525)或符合RoHS标准的无引脚无铅SMT封装(HMC525LC4)，二者均可用作IRM或单边带(SSB)上变频器。 这些混频器采用两个标准Hittite双平衡混频器单元和一个90°混合器件，均采用GaAs金属半导体场效应晶体管(MESFET)工艺制造。 低频正交混合器件用于产生100 MHz USB IF输出。 这些产品为混合型IRM和SSB上变频器组件的更小型替代器件。 所有HMC525数据均通过安装在50 Ω测试夹具中的芯片获取，且包括每个端口直径为1 mil、长度为20 mil的焊线效应。 HMC525LC4无需线焊，可 • 宽中频(IF)带宽： DC至3.5 GHz \n\n• 镜像抑制： 40 dB \n\n• 本振(LO)至射频(RF)隔离： \n50 dB\n\n• 高输入IP3： 23 dBm;

ADI

亚德诺

Package：模具；包装：散装 类别：RF/IF，射频/中频和 RFID 射频混频器 描述：IC MMIC IQ MIXER DIE

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亚德诺

GaAs MMIC I/Q MIXER 4 - 8.5 GHz

General Description The HMC525LC4 is a compact I /Q MMIC mixer in a leadless “Pb free” RoHS compliant SMT package, which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The mixer utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabrica

文件：273.44 Kbytes 页数：6 Pages

Hittite

GaAs MMIC I/Q MIXER 4.0 - 8.5 GHz

文件：240.18 Kbytes 页数：6 Pages

Hittite

4 GHz to 8.5 GHz, Wideband I/Q Mixer

文件：581.64 Kbytes 页数：27 Pages

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亚德诺

4 GHz to 8.5 GHz, Wideband I/Q Mixer

文件：581.64 Kbytes 页数：27 Pages

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亚德诺

4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer

文件：498.75 Kbytes 页数：28 Pages

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亚德诺