GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz

General Description The HMC232 is a broadband non-refl ective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features over 55 dB isolation at lower frequencies and over 45 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using t

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General Description The HMC232 is a broadband non-refl ective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features over 55 dB isolation at lower frequencies and over 45 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using t

文件：853.72 Kbytes 页数：9 Pages

MICROSS

GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz

文件：207.73 Kbytes 页数：6 Pages

Hittite

HMC232 / HMC232LP4 / HMC232G8 / HMC232G7 / HMC232C8高隔离SPDT开关芯片，开关采用SMT和密封SMT封装，DC至15 GHz

HMC232是一款宽带非反射式GaAs MESFET SPDT MMIC芯片和宽带高隔离非反射式GaAs MESFET SPDT开关，采用密封或非密封表贴陶瓷封采用密封或非密封表贴陶瓷封装或低成本无引脚QFN表贴塑料封装。 该开关频率范围为DC至15 GHz，由于采用了片内通孔结构，该开关在较低频率下具有大于60 dB的隔离度，在较高频率下具有大于45 dB的隔离度。 该开关采用-5/0 V的两个负控制电压逻辑线路（A和B）工作，无需Vee或偏置电源。 备选A和B控制焊盘用于方便实施MIC。 所有所示数据均通过50 Ω测试夹具中的芯片测试，通过直径为0.025 mm (1 mil)、长度为0. • 高隔离度： >50 dB (10 GHz)；48 dB至55 dB (2 GHz)；60 dB (3 GHz)；34 dB至52 dB (6 GHz) \n\n• 低插入损耗： 1.4 dB至1.9 dB (6 GHz)；1.5 dB（典型值，4 GHz） \n\n• 非反射设计 \n\n• 裸片尺寸： 2.05 mm x 1.04 mm x 0.1 mm;

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亚德诺

Package：模具；包装：散装 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 15GHZ DIE

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亚德诺

GaAs, SPDT Switch, Nonreflective,100 MHz to 12 GHz

FEATURES Nonreflective 50 Ω design Low insertion loss 1.5 dB typical to 6 GHz 2.5 dB typical to 12 GHz High isolation 50 dB typical to 6 GHz 45 dB typical to 12 GHz High input linearity P0.1dB: 28 dBm typical at VCTRL = −5 V P1dB: 30 dBm typical at VCTRL = −5 V IP3: 48 dBm High power h

文件：1.57372 Mbytes 页数：12 Pages

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亚德诺

GaAs, SPDT Switch, Nonreflective,100 MHz to 12 GHz

FEATURES Nonreflective 50 Ω design Low insertion loss 1.5 dB typical to 6 GHz 2.5 dB typical to 12 GHz High isolation 50 dB typical to 6 GHz 45 dB typical to 12 GHz High input linearity P0.1dB: 28 dBm typical at VCTRL = −5 V P1dB: 30 dBm typical at VCTRL = −5 V IP3: 48 dBm High power h

文件：1.57372 Mbytes 页数：12 Pages

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亚德诺

GaAs, SPDT Switch, Nonreflective,100 MHz to 12 GHz

FEATURES Nonreflective 50 Ω design Low insertion loss 1.5 dB typical to 6 GHz 2.5 dB typical to 12 GHz High isolation 50 dB typical to 6 GHz 45 dB typical to 12 GHz High input linearity P0.1dB: 28 dBm typical at VCTRL = −5 V P1dB: 30 dBm typical at VCTRL = −5 V IP3: 48 dBm High power h

文件：1.57372 Mbytes 页数：12 Pages

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亚德诺

GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz

General Description The HMC232C8 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a non-hermetic surface mount ceramic package. Covering DC to 8.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 8.0 GHz. The switch operates using complement

文件：183.35 Kbytes 页数：6 Pages

Hittite

GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 6.0 GHz

General Description The HMC232G7 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 6.0 GHz. The switch operates using complementary negative

文件：173.83 Kbytes 页数：6 Pages

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