HMC1118

High Isolation, Silicon SPDT, Nonrefective Switch, 9 kHz to 13.0 GHz

HMC1118LP3DE

High Isolation, Silicon SPDT, Nonrefective Switch, 9 kHz to 13.0 GHz

HMC1118LP3DETR

High Isolation, Silicon SPDT, Nonrefective Switch, 9 kHz to 13.0 GHz

HMC1118LP3DE

Package：16-VFQFN 裸露焊盘，CSP；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 13GHZ 16LFCSP

HMC1118LP3DETR

Package：16-VFQFN 裸露焊盘，CSP；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SPDT 13GHZ 16LFCSP

HSK1118

SiliconNChannelMOSType

Description •FieldEffectTransistor. •SiliconNChannelMOSType. •HighSpeed,HighCurrentDC-DCConverter,RelayDriveandMotorDriveApplications Features •4-VoltGateDrive •LowDrain-SourceOnResistanc-RDS(on)=0.95Ω(Typ.) •HighForwardTransferAdmittance-|Yfs|=4.0S(Ty

ISF1118

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=400A@TC=25℃ ·DrainSourceVoltage- :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3mΩ(Max)@VGS=10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive

LR1118

LOWDROPPOSITIVEVOLTAGEREGULATORS

■DESCRIPTION TheUTCLR1118isalowdropvoltageregulatorabletoprovideupto1Aofoutputcurrent,availablealsoforadjustableversion(VREF=1.24V).OutputconsistsofPNPpowertransistor.Sothatdropoutvoltagecanbeextremelylow. ■FEATURES *2.85Vdevicearesuitablefor

LR1118

LOWDROPPOSITIVEVOLTAGEREGULATORS

LR1118

LOWDROPPOSITIVEVOLTAGEREGULATORS