0.5A Low Power LDO

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24G4 10GbE-port Layer 2/Layer 3 full Gigabit managed Ethernet switches

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moxaMOXA

台湾摩莎摩莎科技（上海）有限公司

HEXFET Power MOSFET for DC-DC Converters

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

文件：479.74 Kbytes 页数：6 Pages

IRF

HEXFET짰 Power MOSFET for DC-DC Converters

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

文件：580.81 Kbytes 页数：6 Pages

IRF