HM628512BLFP-5

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFP-5

4 M SRAM (512-kword x 8-bit); •  Single 5 V supply\n•  Access time: 55/70 ns (max)\n•  Power dissipation\n Active: 50 mW/MHz (typ)\n Standby: 10 µW (typ)\n•  Completely static memory. No clock or timing strobe required\n•  Equal access and cycle times\n•  Common data input and output: Three state output\n•  Directly TTL compatible: All inputs and outputs\n•  Battery backup operation;

Description\nThe Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system.\n\n

HM628512BLFP-5SL

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFP-5UL

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFP-7

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFP-7SL

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFP-7UL

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HM628512BLFPI-7

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HM628512BLFPI-8

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HM628512BLP-5

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo