首页 >HM628100ISERIES>规格书列表
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128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix |
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