丝印：HM4953A；Package：SOP-8；Dual P-Channel Enhancement Mode Power MOSFET

文件：585.97 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

Dual P-Channel 30-V (D-S) MOSFET

文件：1.10093 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05591 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual 30V P-Channel PowerTrench MOSFET

Features ● -5 A, -30 V. RDS(ON) = 55m @ VGS = -10V RDS(ON) = 95m @ VGS =-4.5V ● Low gate charge(6nC typical) ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability ● Fast switching speed

文件：62.39 Kbytes 页数：2 Pages

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