Low-voltage Operation

文件：584.16 Kbytes 页数：15 Pages

HMSEMI

华之美半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128A/256A is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128A is 128K-bit (16Kx8) and the IS24C256A is 256K-bit (32Kx8). These EEPROM are offered in a wide operating voltage range of 1.8V to 5.5V to be compatible

文件：125.2 Kbytes 页数：17 Pages

ISSI

矽成半导体

128K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128B is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128B is 128K-bit (16Kx8). These EEPROM are offered in a wide operating voltage range of 1.8V to 5.5V to be compatible with most application voltages. ISSI desig

文件：482.47 Kbytes 页数：17 Pages

ISSI

矽成半导体