首页 >HM2302DR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistorSMD Features ■20V,3.7A,RDS(ON)=50mΩ@VGS=4.5V ■HighdensecelldesignforextremelylowRDS(ON) ■Ruggedandreliable ■Leadfreeproductisacquired ■SOT-23Package ■MarkingCode:A2SHB CaseMaterial:MoldedPlastic. ULFlammabilityClassificationRating94V-0 | HAOHAIHAOHAI ELECTRONICS CO., LTD. 浩海电子深圳市浩海电子有限公司 | HAOHAI | ||
HALF-BRIDGEDRIVER Description TheIR2302(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorLSTT | IRF International Rectifier | IRF | ||
Gatedrivesupplyrangefrom5to20V | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER Description TheIR2302(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorLSTT | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER Description TheIR2302(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorLSTT | IRF International Rectifier | IRF | ||
Gatedrivesupplyrangefrom5to20V | IRF International Rectifier | IRF |
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