丝印：HM2015DN03Q；Package：DFN3x3-8L；30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET

文件：472.99 Kbytes 页数：8 Pages

HMSEMI

华之美半导体

丝印：HM20N06KA；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：549.77 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM20N15A；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：836.47 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM20N15D；Package：DFN5x6-8L；N-Channel Enhancement Mode Power MOSFET

文件：883.69 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM20P02D；Package：DFN5x6-8L；P-Channel Enhancement Mode Power MOSFET

文件：941.83 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：HM20P02Q；Package：DFN3x3-8L；P-Channel Enhancement Mode Power MOSFET

文件：997.91 Kbytes 页数：7 Pages

HMSEMI

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EV Charging Inductor

Features:  Operating temperature range -40°C to +155°C  Parallel and series configuration  166uH inductance at 16mΩ DCR (Parallel)  666uH inductance at 64mΩ DCR (Series)  26Adc rated current (Parallel) at 40°C temperature rise  55Adc saturation current (Parallel)  Dielectric strength

文件：168.94 Kbytes 页数：5 Pages

TTELEC

1.2A built-in power tube step-down LED constant current driver IC

文件：2.00362 Mbytes 页数：8 Pages

HMSEMI

华之美半导体

High and Low Side Driver

文件：549.9 Kbytes 页数：5 Pages

HMSEMI

华之美半导体

High and Low Side Driver

文件：549.9 Kbytes 页数：5 Pages

HMSEMI

华之美半导体