1200V /15A Trench Field Stop IGBT

文件：1.11138 Mbytes 页数：8 Pages

HMSEMI

华之美半导体

1200V /15A Trench Field Stop IGBT

文件：1.21202 Mbytes 页数：8 Pages

HMSEMI

华之美半导体

Reverse Conducting IGBT with monolithic body diode

Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high rugg

文件：370.62 Kbytes 页数：12 Pages

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌