首页 >HLPL-721>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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12MHz,HighSlewRate,RRIOCMOSOperationalAmplifiers | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
12MHz,HighSlewRate,RRIOCMOSOperationalAmplifiers | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
12MHz,HighSlewRate,RRIOCMOSOperationalAmplifiers | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighSpeedTwo-ChannelDigitalIsolators Features •Highspeed:150Mbpstypical(S-Series) •Hightemperature:−40°Cto+125°C(T-SeriesandV-Series •6kVRMSReinforcedIsolation;1.2kVRMSWorkingVoltage(V-Series) •2.7to5.5voltsupplyrange •100kV/μsCommonModeTransientImmunity •NocarrierorclockforlowEMIemi | NVE NVE Corporation | NVE | ||
HighIsolationVoltageDigitalIsolators Features •5000VRMS/7072VPKisolationvoltage(1minute;perUL1577) •1000VRMS/1415VPKworkingvoltage(VIORM)underVDE0884-10 •10kVRMSsurgevoltageunderVDE0884-10 •Hightemperature:−40°Cto+125°C •50kV/μstyp.;30kV/μsmin.commonmodetransientimmunity •Nocarrierorcl | NVE NVE Corporation | NVE | ||
HighSpeedTwo-ChannelDigitalIsolators Features •Highspeed:150Mbpstypical(S-Series) •Hightemperature:−40°Cto+125°C(T-SeriesandV-Series •6kVRMSReinforcedIsolation;1.2kVRMSWorkingVoltage(V-Series) •2.7to5.5voltsupplyrange •100kV/μsCommonModeTransientImmunity •NocarrierorclockforlowEMIemi | NVE NVE Corporation | NVE | ||
N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFETS FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
TRANSISTORSN-CHANNEL 400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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