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Faraday

Faraday Technology

HEXFET Power MOSFET

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

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Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

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IRF

HEXFET Power MOSFET

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

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IRF