SI4737

Si470X/1X/2X/3X/4XEVALUATIONBOARDTESTPROCEDURE

Introduction ThepurposeofthisdocumentistodescribethetestproceduresusedinSiliconLaboratoriesfortheSi470x/1x/2x/3x/4xevaluationboards(EVB).ItisalsointendedtoenablecustomerstoexactlyreplicateSiliconLaboratories’testenvironmentsothatvariancesincustomers’andS

Si4737

ThankyouforpurchasingtheSiliconLaboratories

SI4737

Si47XXANTENNA,SCHEMATIC,LAYOUT,ANDDESIGNGUIDELINES

Introduction ThisdocumentprovidesgeneralSi47xxdesignguidelinesandAM/FM/SW/LW/WBantennaselectionswhichincludesschematic,BOM,layoutanddesignchecklist.AllusersshouldfollowtheSi47xxdesignguidelinespresentedinSection2andthenuserscanproceedtotheappropriateantenn

SI4737

Si47XXPROGRAMMINGGUIDE

SMA4737

1.0WattsSurfaceMountZenerDiode

VOLTAGE6.2V~100V ●FEATURES .Forsurfacemountedapplications .1.0Wpowerdissipation .Lowreversecurrent .Ideallysuitedforautomatedassemblyprocesses .Epitaxialconstruction

SMA4737

1.0WattsSurfaceMountZenerDiode

SMA4737A

ZenerDiodes

■Features ●Ptot1.0W ●Vz3.3V-100V ■Applications ●StabilizingVoltage

SMA4737A

SMA4728A-SZ1330ASeriesVZ:3.3To330VPD:1W

Features ◆Glasspassivatedchip ◆Lowleakage ◆Built-instrainrelief ◆Lowinductance ◆Highpeakreversepowerdissipation ◆Lead-Freecomponent ◆Foruseinstabilizingandclippingwithhighpowerrating

SMA4737A

1WGLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

FEATURES ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclippingcircuitswithhighpower

SMA4737A

ZenerDiodes