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HD74HC279RPEL

OctalD-typeFlip-Flops(withClear)

Description Thelatchisideallysuitedforuseastemporarystageforbinaryinformationprocessingandinput/outputunits.WheneitherSorRislow,outputisdependentonRinput.Whenbothinputsarehigh,Outputisstoredbeforetheindicatedsteady-stateinputconditionswereestablished

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M74HC279

QUADS-RLATCH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HC279

QUADS-RLATCH

DESCRIPTION TheM74HC279isanhighspeedCMOSQUADS-RLATCHfabricatedwithsilicongateC2MOStechnology. ■HIGHSPEED: tPD=13ns(TYP.)atVCC=6V ■LOWPOWERDISSIPATION: ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUNITY: VNIH=VNIL=28VCC(MIN.) ■SYMMETRICALO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HC279TTR

QUADS-RLATCH

DESCRIPTION TheM74HC279isanhighspeedCMOSQUADS-RLATCHfabricatedwithsilicongateC2MOStechnology. ■HIGHSPEED: tPD=13ns(TYP.)atVCC=6V ■LOWPOWERDISSIPATION: ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUNITY: VNIH=VNIL=28VCC(MIN.) ■SYMMETRICALO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TC74HC279

CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC279AF

QuadS-RLatch

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC279AF

CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC279AP

QuadS-RLatch

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC279AP

CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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