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HD74HC133RPEL

13-inputNANDGate

Description Thisdevicecontainsasingle13-inputNANDgate.Theyperformthebooleanfunctionsinpositivelogic. Features •HighSpeedOperation:tpd=12.5nstyp(CL=50pF) •HighOutputCurrent:Fanoutof10LSTTLLoads •WideOperatingVoltage:VCC=2to6V •LowInputCurrent:1

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M74HC133

13INPUTNANDGATE

DESCRIPTION TheM54/74HC133isahighspeedCMOS13-INPUTNANDGATEfabricatedinsilicongateC2MOStechnology.IthasthesamehighspeedperformanceofLSTTLcombinedwithtrueCMOSlowpowerconsumption.Theinternalcircuitiscomposedof7stagesincludingbufferoutput,whichgiveshighno

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HC133

13INPUTNANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HC133TTR

13INPUTNANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MM74HC133

13-InputNANDGate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

MM74HC133J

13-InputNANDGate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

MM74HC133N

13-InputNANDGate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

TC74HC133AF

13-InputNANDGate

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC133AF

TOSHIBACMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC

13-InputNANDGate TheTC74HC133AisahighspeedCMOS13-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentLSTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposesof7stages,includingab

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74HC133AP

TOSHIBACMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC

13-InputNANDGate TheTC74HC133AisahighspeedCMOS13-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentLSTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposesof7stages,includingab

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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