Radiation Hardened Triple 3-Input NAND Gate

Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F

文件：181.78 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Triple 3-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos

文件：389.34 Kbytes 页数：8 Pages

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